Suspended waveguide photodetector featuring p-n junction InGaN/GaN multiple quantum wells-Reference-Cited by-同舟云学术

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Suspended waveguide photodetector featuring p-n junction InGaN/GaN multiple quantum wells

Published:2016-06-23 Issue:7 Volume:6 Page:2366
ISSN:2159-3930
Container-title:Optical Materials Express
language:en
Short-container-title:Opt. Mater. Express

Author:

Yuan Wei,Xu Yin,Gao Xumin,Zhu Bingcheng,Cai Wei,Zhu Guixia,Yang Yongchao,Wang Yongjin

Funder

National Natural Science Foundation of China (NSFC)

Publisher

The Optical Society

Subject

Electronic, Optical and Magnetic Materials

Reference28 articles.

1. Enhanced performance of InGaN/GaN based solar cells with an In_005Ga_095N ultra-thin inserting layer between GaN barrier and In_02Ga_08N well

2. III nitrides and UV detection

3. Visible blind GaN p-i-n photodiodes

4. High performances III-Nitride Quantum Dot infrared photodetector operating at room temperature

5. Effects of thermal and hydrogen treatment on indium segregation in InGaN/GaN multiple quantum wells

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Photodetectors integrating waveguides and semiconductor materials;Nanoscale;2024

2. On-chip optical spectrometer based on GaN wavelength-selective nanostructural absorbers;Applied Physics Letters;2020-02-24

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