Effects of thermal and hydrogen treatment on indium segregation in InGaN/GaN multiple quantum wells
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1370368
Reference31 articles.
1. Wide-gap semiconductor InGaN and InGaAln grown by MOVPE
2. Growth of bulk InGaN films and quantum wells by atmospheric pressure metalorganic chemical vapour deposition
3. High Indium Content Ingan Films and Quantum Wells.
4. Indium incorporation during the growth of InGaN by molecular-beam epitaxy studied by reflection high-energy electron diffraction intensity oscillations
5. Preparation and optical properties of Ga1−xInxN thin films
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