Evaluation of metal/indium-tin-oxide for transparent low-resistance contacts to p-type GaN-Reference-Cited by-同舟云学术

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Evaluation of metal/indium-tin-oxide for transparent low-resistance contacts to p-type GaN

Published:2012-08-02 Issue:23 Volume:51 Page:5596
ISSN:1559-128X
Container-title:Applied Optics
language:en
Short-container-title:Appl. Opt.

Author:

Hou Wenting,Stark Christoph,You Shi,Zhao Liang,Detchprohm Theeradetch,Wetzel Christian

Funder

Solid-State Lighting Contract of Directed Research

National Science Foundation (NSF) Smart Lighting Engineering Research Center

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics,Engineering (miscellaneous),Electrical and Electronic Engineering

Reference28 articles.

1. Crystal Growth and Conductivity Control of Group III Nitride Semiconductors and Their Application to Short Wavelength Light Emitters

2. Future challenges and directions for nitride materials and light emitters

3. GaInN-Based Solar Cells Using Strained-Layer GaInN/GaInN Superlattice Active Layer on a Freestanding GaN Substrate

4. Highly P-Typed Mg-Doped GaN Films Grown with GaN Buffer Layers

5. Activation of acceptors in Mg‐doped GaN grown by metalorganic chemical vapor deposition

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1. AlGaN nanowire deep ultraviolet light emitting diodes with graphene electrode;Applied Physics Letters;2022-04-25

2. Optimal ITO transparent conductive layers for InGaN-based amber/red light-emitting diodes;Optics Express;2020-04-09

3. An electrically pumped surface-emitting semiconductor green laser;Science Advances;2020-01-03

4. Realization of p-GaN ohmic contact by using a strained p-AlInGaN interlayer and its application in UVA LEDs;Japanese Journal of Applied Physics;2019-06-01

5. Effects on electrical and optical properties of InGaN/GaN MQWs light-emitting diodes using Ni/ITO transparent p-contacts on p-GaN;Journal of Optics;2019-05-03

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