Quantum well interband semiconductor lasers highly tolerant to dislocations-Reference-Cited by-同舟云学术

Quantum well interband semiconductor lasers highly tolerant to dislocations

Published:2021-11-02 Issue:11 Volume:8 Page:1397
ISSN:2334-2536
Container-title:Optica
language:en
Short-container-title:Optica

Author:

Cerutti Laurent^ORCID,Díaz Thomas Daniel A.,Rodriguez Jean-Baptiste,Rio Calvo Marta,Patriarche Gilles^ORCID,Baranov Alexei N.^ORCID,Tournié Eric^ORCID

Funder

Agence Nationale de la Recherche

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference40 articles.

1. Ge-on-Si laser operating at room temperature

2. Lasing in direct-bandgap GeSn alloy grown on Si

3. Ultra-low-threshold continuous-wave and pulsed lasing in tensile-strained GeSn alloys

4. An ultra-small, low-power, all-optical flip-flop memory on a silicon chip

5. Hybrid indium phosphide-on-silicon nanolaser diode

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