ZnCdSe/ZnCdMgSe quantum well infrared photodetector
Author:
Publisher
The Optical Society
Subject
Atomic and Molecular Physics, and Optics
Reference18 articles.
1. Demonstration of a 320×256 two-color focal plane array using InAs/InGaAs quantum dots in well detectors
2. High operating temperature 320×256 middle-wavelength infrared focal plane array imaging based on an InAs∕InGaAs∕InAlAs∕InP quantum dot infrared photodetector
3. Study of intersubband transitions of Zn[sub x]Cd[sub 1−x]Se∕Zn[sub x[sup ʹ]]Cd[sub y[sup ʹ]]Mg[sub 1−x[sup ʹ]−y[sup ʹ]]Se multiple quantum wells grown by molecular beam epitaxy for midinfrared device applications
4. Growth and characterization of Zn[sub x]Cd[sub 1−x]Se∕Zn[sub x[sup ʹ]]Cd[sub y[sup ʹ]]Mg[sub 1−x[sup ʹ]−y[sup ʹ]]Se asymmetric coupled quantum well structures for quantum cascade laser applications
5. Midinfrared intersubband absorption in ZnxCd1−xSe∕Znx′Cdy′Mg1−x′−y′Se multiple quantum well structures
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1. Electromagnetically induced transparency based quantum well infrared photodetectors;Journal of Luminescence;2022-11
2. Thermovision measurements of rolling bearings;Measurement;2022-02
3. Suspension and transfer printing of ZnCdMgSe membranes from an InP substrate;Optical Materials Express;2020-11-19
4. Two-band ZnCdSe/ZnCdMgSe quantum well infrared photodetector;AIP Advances;2018-07
5. Molecular Beam Epitaxy-Grown Wide Band Gap II–VI Semiconductors for Intersubband Device Applications;Molecular Beam Epitaxy;2018
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