Interrelations between technology for obtaining quantum dots and optoelectronic properties of semiconductors [Invited]-Reference-Cited by-同舟云学术

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Interrelations between technology for obtaining quantum dots and optoelectronic properties of semiconductors [Invited]

Published:2014-02-05 Issue:10 Volume:53 Page:B87
ISSN:1559-128X
Container-title:Applied Optics
language:en
Short-container-title:Appl. Opt.

Author:

Vengrenovich R. D.,Ivanskii B. V.,Yarema S. V.,Pan’ko I. I.,Stasyk M. O.,Moskalyuk A. V.

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics,Engineering (miscellaneous),Electrical and Electronic Engineering

Reference41 articles.

1. Growth by molecular beam epitaxy and characterization of InAs/GaAs strained‐layer superlattices

2. Dislocation-free Stranski-Krastanow growth of Ge on Si(100)

3. Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001)

4. Elastic relaxation energies of coherent germanium islands on silicon;VanderbiltThompson,1991

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1. Ostwald Ripening of Nanodispersed Phases in Metal Alloys (review);Фізика і хімія твердого тіла;2019-07-10

2. To the theory of Ostwald ripening in metallic alloys;The Physics of Metals and Metallography;2016-08

3. Synthesis and characterization of silicon nanorod on n-type porous silicon;Applied Optics;2016-03-15

4. Ostwald’s ripening of single-layer carbon nanotubes;Applied Optics;2016-01-12

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