Author:
Bulgakov Alexander V.,Volodin Vladimir A.,Cheng Yuzhu,Levy Yoann,Beránek Jiří,Nagisetty Siva S.,Zukerstein Martin,Popov Alexander A.,Bulgakova Nadezhda M.
Abstract
Germanium nanocrystallites in an amorphous silicon matrix are produced by selective crystallization of a-Ge/Si multilayer stacks using near- and mid-infrared ultrashort-pulse lasers. Several non-ablative annealing regimes are revealed by Raman spectroscopy. Crystallization mechanisms are discussed.