Abstract
The introduction of an in situ C-doped GaN layer in green light-emitting diodes (LEDs) is successfully realized by optimizing the temperature of the GaN growth process. The C-doped GaN film acts as a current spreading layer for green LEDs, allowing for a more uniform current distribution and consequently an increase in luminous efficiency. At the same time, the insertion of a C-doped GaN layer does not lead to the degradation of the surface morphology as well as the crystalline quality. Electroluminescence results show that the C-doped GaN layer grown at 850°C is appropriate to be used in green LEDs.
Funder
State Key Laboratory on Integrated Optoelectronics
Fundamental Research Funds for the Central Universities
National Natural Science Foundation of China
Subject
Atomic and Molecular Physics, and Optics
Cited by
3 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献