Atomic layer deposition of magnesium fluoride for optical application

Abstract

Magnesium fluoride (MgF2) thin films deposited using atomic layer deposition (ALD) were studied for use as optical coatings. The deposition was performed in a commercially available Picosun R-200 Advanced ALD reactor. Characterization of these films was performed using spectroscopic ellipsometry (SE), X-ray Photoelectron Spectroscopy (XPS), Rutherford Backscattering Spectrometry (RBS), Scanning electron microscopes (SEM) and spectrophotometer for thin films deposited on silicon substrates and quartz lens. ALD deposited films showed high R+T at wavelength down to 350 nm, low oxygen and carbon concentration in the films.