Schottky-type GaN-based UV photodetector with atomic-layer-deposited TiN thin film as electrodes
Author:
Funder
National Natural Science Foundation of China
Science and Technology Commission of Shanghai Municipality
Publisher
The Optical Society
Subject
Atomic and Molecular Physics, and Optics
Reference23 articles.
1. High-performance nanoporous-GaN metal-insulator-semiconductor ultraviolet photodetectors with a thermal oxidized β-Ga2O3 layer
2. Self-Powered Ultraviolet Photodetectors Driven by Built-In Electric Field
3. Self‐Powered MXene/GaN van der Waals Heterojunction Ultraviolet Photodiodes with Superhigh Efficiency and Stable Current Outputs
4. Vertically aligned GaN nanorod arrays/p-Si heterojunction self-powered UV photodetector with ultrahigh photoresponsivity
5. Self-powered ultraviolet MSM photodetectors with high responsivity enabled by a lateral n+/n− homojunction from opposite polarity domains
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