InAs/GaAsSb quantum dot solar cells-Reference-Cited by-同舟云学术

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InAs/GaAsSb quantum dot solar cells

Published:2014-03-26 Issue:S3 Volume:22 Page:A679
ISSN:1094-4087
Container-title:Optics Express
language:en
Short-container-title:Opt. Express

Author:

Hatch Sabina,Wu Jiang,Sablon Kimberly,Lam Phu,Tang Mingchu,Jiang Qi,Liu Huiyun

Funder

Engineering and Physical Sciences Research Council (EPSRC)

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Reference22 articles.

1. Increasing the Efficiency of Ideal Solar Cells by Photon Induced Transitions at Intermediate Levels

2. Electron-hole recombination properties of In0.5Ga0.5As/GaAs quantum dot solar cells and the influence on the open circuit voltage

3. On the Partial Filling of the Intermediate Band in IB Solar Cells

4. Improved performance of multilayer InAs/GaAs quantum-dot solar cells using a high-growth-temperature GaAs spacer layer

5. Emitter degradation in quantum dot intermediate band solar cells

Cited by 40 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Antimony composition impact on band alignment in InAs/GaAsSb quantum dots;Solid State Communications;2024-11

2. Submonolayer InAs Quantum Dot Based Solar Cell: A New Approach Towards Intermediate Band Solar Cell;Nanoelectronics Devices: Design, Materials, and Applications Part II;2023-11-26

3. Improved performance of quantum dot solar cells by type-II InAs/GaAsSb structure with moderate Sb composition;Heliyon;2023-09

4. Complex exciton dynamics with elevated temperature in a GaAsSb/GaAs quantum well heterostructure;Applied Physics Letters;2023-04-24

5. Performance optimization of In(Ga)As quantum dot intermediate band solar cells;Discover Nano;2023-04-20

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