Electron-hole recombination properties of In0.5Ga0.5As/GaAs quantum dot solar cells and the influence on the open circuit voltage
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3492836
Reference13 articles.
1. Increasing the Efficiency of Ideal Solar Cells by Photon Induced Transitions at Intermediate Levels
2. Partial filling of a quantum dot intermediate band for solar cells
3. Photofilling of intermediate bands
4. Quasi-drift diffusion model for the quantum dot intermediate band solar cell
5. Theoretical and experimental examination of the intermediate-band concept for strain-balanced (In,Ga)As/Ga(As,P) quantum dot solar cells
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