Affiliation:
1. University of Dayton
2. UES, Inc.
3. General Dynamics Information Technology
Abstract
Nonlinear optical properties of a selection of gallium nitride samples
have been measured using picosecond and nanosecond duration laser
pulses at 532 nm. The values of the two-photon absorption
coefficient, free carrier absorption cross section, and free carrier
refraction cross section are determined along with the recombination
lifetime of photogenerated carriers. The effect of hot isostatic
pressing on these properties in samples with linear absorption at the
band edge due to defects is explored.
Funder
Air Force Office of Scientific
Research
Subject
Atomic and Molecular Physics, and Optics,Engineering (miscellaneous),Electrical and Electronic Engineering