Improved photoelectrical properties of n-ZnO/p-Si heterojunction by inserting an optimized thin Al_2O_3 buffer layer-Reference-Cited by-同舟云学术

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Improved photoelectrical properties of n-ZnO/p-Si heterojunction by inserting an optimized thin Al_2O_3 buffer layer

Published:2014-09-05 Issue:18 Volume:22 Page:22184
ISSN:1094-4087
Container-title:Optics Express
language:en
Short-container-title:Opt. Express

Author:

Lu Hong-Liang,Gu Yu-Zhu,Zhang Yuan,Liu Xin-Yan,Wang Peng-Fei,Sun Qing-Qing,Ding Shi-Jin,Zhang David Wei

Funder

National Natural Science Foundation of China (NSFC)

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Reference28 articles.

1. A comprehensive review of ZnO materials and devices

2. Recent advances in ZnO materials and devices

3. p-Type ZnO materials: Theory, growth, properties and devices

4. Hydrogen as a Cause of Doping in Zinc Oxide

5. Deep ultraviolet and near infrared photodiode based on n-ZnO/p-silicon nanowire heterojunction fabricated at low temperature

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