Effects of Bi on band gap bowing in InP1-xBix alloys-Reference-Cited by-同舟云学术

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Effects of Bi on band gap bowing in InP1-xBix alloys

Published:2018-04-11 Issue:5 Volume:8 Page:1184
ISSN:2159-3930
Container-title:Optical Materials Express
language:en
Short-container-title:Opt. Mater. Express

Author:

Chen Xi,Shen Wanting,Liang Dan,Quhe Ruge,Wang Shumin,Guan Pengfei,Lu Pengfei

Funder

National Natural Science Foundation of China (NSFC)

Publisher

The Optical Society

Subject

Electronic, Optical and Magnetic Materials

Reference41 articles.

1. Formation of an ordered pattern of Bi nanolines on InAs(100) by self-assembly

2. Structural and electronic properties of Bi-adsorbate-stabilized reconstructions on the InP(100) andGaAsxN1−x(100)surfaces

3. Bismide-nitride alloys: Promising for efficient light emitting devices in the near- and mid-infrared

4. Composition dependence of photoluminescence of GaAs1−xBix alloys

5. The electronic and optical properties of quaternary GaAs1-x-yN x Bi y alloy lattice-matched to GaAs: a first-principles study

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1. Observation of band gap bowing effect vanishing in graded-composition monolayer Mo1−xWxS2 alloy;Applied Physics Letters;2024-02-12

2. Revived BBFTO double perovskite with improved dielectric properties for some possible device applications;Journal of Materials Science: Materials in Electronics;2023-04

3. Theoretical studies of optoelectronic properties of AlP1xBix ternaries: Promising light sources for fiber optic communications;Radiation Physics and Chemistry;2023-01

4. Structural and Optical Properties of InAsSbBi Grown by Molecular Beam Epitaxy on Offcut GaSb Substrates;Photonics;2021-06-11

5. Kinetic model for molecular beam epitaxy growth of InAsSbBi alloys;Journal of Applied Physics;2021-01-21

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