Investigation of high indium-composition InGaN/GaN heterostructures on ZnO grown by metallic organic chemical vapor deposition
Author:
Funder
National Natural Science Foundation of China (NSFC)
Natural Science Foundation of Guangxi Province
Publisher
The Optical Society
Subject
Electronic, Optical and Magnetic Materials
Reference30 articles.
1. High-Quality InGaN Films Grown on GaN Films
2. Design and characterization of GaN∕InGaN solar cells
3. Barrier height inhomogeneity in electrical transport characteristics of InGaN/GaN heterostructure interfaces
4. Coherent growth of r -plane GaN films on ZnO substrates at room temperature
5. Metalorganic chemical vapor deposition of InGaN layers on ZnO substrates
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