Structural and optical properties of GaSbBi/GaSb quantum wells [Invited]-Reference-Cited by-同舟云学术

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Structural and optical properties of GaSbBi/GaSb quantum wells [Invited]

Published:2018-03-14 Issue:4 Volume:8 Page:893
ISSN:2159-3930
Container-title:Optical Materials Express
language:en
Short-container-title:Opt. Mater. Express

Author:

Yue Li,Chen Xiren,Zhang Yanchao,Kopaczek Jan,Shao Jun,Gladysiewicz Marta,Kudrawiec Robert,Ou Xin,Wang Shumin

Funder

Key Program of Natural Science Foundation of China

National Basic Research Program of China (973 Project)

National Key Research Program of China

National Natural Science Foundation of China (NSFC)

NCN grant

Science and Technology Commission of Shanghai Municipality (STCSM)

Vetenskapsrådet (VR)

Publisher

The Optical Society

Subject

Electronic, Optical and Magnetic Materials

Reference26 articles.

1. Growth and properties of GaSbBi alloys

2. Temperature dependence of the band gap of GaSb1−xBix alloys with 0 < x ≤ 0.042 determined by photoreflectance

3. Electronic band structure and material gain of III-V-Bi quantum wells grown on GaSb substrate and dedicated for mid-infrared spectral range

4. Type-I GaSb-Based Laser Diodes Operating in 3.1- to 3.3-$\mu$m Wavelength Range

5. Continuous wave operation of diode lasers at 3.36μm at 12°C

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. GaSbBi Metal Semiconductor Metal Detectors for Mid-Infrared Sensing;Frontiers in Electronic Materials;2022-06-16

2. Modified band alignment method to obtain hybrid functional accuracy from standard DFT: Application to defects in highly mismatched III-V:Bi alloys;Physical Review Materials;2021-12-03

3. The scanning tunneling microscopy and spectroscopy of GaSb1– x Bi x films of a few-nanometer thickness grown by molecular beam epitaxy;Journal of Semiconductors;2021-09-01

4. Optical gain and threshold current density for mid-infrared GaSbBi/GaSb quantum-well laser structure;Materials Science and Engineering: B;2021-04

5. Optical properties and dynamics of excitons in Ga(Sb, Bi)/GaSb quantum wells: evidence for a regular alloy behavior;Semiconductor Science and Technology;2020-01-17

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