Enhanced performance of InGaN/GaN MQW LED with strain-relaxing Ga-doped ZnO transparent conducting layer-Reference-Cited by-同舟云学术

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Enhanced performance of InGaN/GaN MQW LED with strain-relaxing Ga-doped ZnO transparent conducting layer

Published:2019-03-20 Issue:8 Volume:27 Page:A458
ISSN:1094-4087
Container-title:Optics Express
language:en
Short-container-title:Opt. Express

Author:

Kim Sang-Jo,Lee Kwang Jae,Oh Semi,Han Jang-Hwang,Lee Dong-Seon,Park Seong-Ju

Funder

Gwangju Institute of Science and Technology

Ministry of Education

National Research Foundation of Korea

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Reference37 articles.

1. Solid-State Light Sources Getting Smart

2. Nitride-based semiconductors for blue and green light-emitting devices

3. Origin of efficiency droop in GaN-based light-emitting diodes

4. The silicon oxynitride layer deposited at low temperature for high-brightness GaN-based light-emitting diodes

5. Growth and Separation of High Quality GaN Epilayer from Sapphire Substrate by Lateral Epitaxial Overgrowth and Wet Chemical Etching

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1. Using Modified-Intake Plasma-Enhanced Metal–Organic Chemical Vapor Deposition System to Grow Gallium Doped Zinc Oxide;Micromachines;2021-12-20

2. Photoluminescence and optical studies of 4 MeV electron irradiated MOCVD grown GaN;Materials Chemistry and Physics;2021-07

3. Plasma-treated room temperature synthesized CuCrO2/Au/CuCrO2 on Polyethylene terephthalate: Towards a high-performance flexible p-type transparent conductor;Thin Solid Films;2021-04

4. Nitrogen doped ultrananocrystalline diamond conductive layer grown on InGaN-based light-emitting diodes using nanopattern enhanced nucleation;Applied Surface Science;2021-04

5. Efficiency improvement of AlGaN-based deep ultraviolet LEDs with gradual Al-composition AlGaN conduction layer;Optoelectronics Letters;2020-07

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