InGaAs/InP multi-quantum-well nanowires with a lower optical leakage loss on v-groove-patterned SOI substrates-Reference-Cited by-同舟云学术

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InGaAs/InP multi-quantum-well nanowires with a lower optical leakage loss on v-groove-patterned SOI substrates

Published:2019-01-07 Issue:2 Volume:27 Page:494
ISSN:1094-4087
Container-title:Optics Express
language:en
Short-container-title:Opt. Express

Author:

Li Yajie,Wang Mengqi,Zhou Xuliang,Wang Pengfei,Yang Wenyu,Meng Fangyuan,Luo Guangzhen,Yu Hongyan,Pan Jiaoqing,Wang Wei

Funder

the Frontier Science Research Project of CAS

the National Key Technology R&D Program

National Natural Science Foundation of China (NSFC)

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Reference28 articles.

1. Electrically pumped continuous-wave III–V quantum dot lasers on silicon

2. Hybrid III–V on Silicon Laterally Coupled Distributed Feedback Laser Operating in the $O$ -Band

3. Recent progress in lasers on silicon

4. Room-temperature continuous-wave electrically injected InGaN-based laser directly grown on Si

5. Hybrid InGaAsP-Si Evanescent Laser by Selective-Area Metal-Bonding Method

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1. Numerical simulation of electrically-pumped overgrown III-V microwire lasers on silicon;Optics Communications;2025-01

2. Selective Growth of Energy-Band-Controllable In1−xGaxAsyP1−y Submicron Wires in V-Shaped Trench on Si;Crystals;2022-03-30

3. Design of III-V submicron lasers with reversed ridge waveguides on patterned Si/SOI substrates;Advanced Lasers, High-Power Lasers, and Applications XII;2021-10-09

4. Selective epitaxial growth of AlGaAs/GaAs heterostructures on 300 mm Si(001) for red optical emission;Thin Solid Films;2021-03

5. Application of an Sb Surfactant in InGaAs Nano-ridge Engineering on 300 mm Silicon Substrates;Crystal Growth & Design;2021-02-08

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