Competition mechanism of exciton decay channels in the stacked multilayer tungsten sulfide

Abstract

The competition mechanism of exciton decay channels in the multilayer TMDs remains poorly understood. Here, the exciton dynamics in the stacked WS2 was studied. The exciton decay processes are divided into the fast and slow decay processes, which are dominated by the exciton-exciton annihilation (EEA) and defect-assisted recombination (DAR), respectively. The lifetime of EEA is on the order of hundreds of femtoseconds (400∼1100 fs). It is decreased initially, followed by an increase with adding layer thickness, which can be attributed to the competition between phonon-assisted effect and defect effect. The lifetime of DAR is on the timescale of hundreds of picoseconds (200∼800 ps), which is determined by the defect density especially in a high injected carrier density.