High net modal gain (>100 cm^−1) in 19-stacked InGaAs quantum dot laser diodes at 1000 nm wavelength band
Author:
Publisher
The Optical Society
Subject
Atomic and Molecular Physics, and Optics
Reference20 articles.
1. Very low threshold current density room temperature continuous-wave lasing from a single-layer InAs quantum-dot laser
2. Output power and its limitation in ridge-waveguide 1.3 m wavelength quantum-dot lasers
3. Simultaneous two-state lasing in quantum-dot lasers
4. Effect of InGaAs capping layer on the properties of InAs/InGaAs quantum dots and lasers
5. Linear increase of the modal gain in 1.3 µm InAs/GaAs quantum dot lasers containing up to seven-stacked QD layers
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1. Gain spectra of lasers based on transitional dimension active region;Journal of Physics: Conference Series;2020-12-01
2. Monolithically integrated quantum dot optical modulator with semiconductor optical amplifier for thousand and original band optical communication;Japanese Journal of Applied Physics;2016-03-29
3. External cavity laser using a InAs quantum dot gain chip and an arrayed-waveguide grating for T-band optical communications;SPIE Proceedings;2015-02-27
4. Time-Resolved Photoluminescence Study of InGaAs Quantum Dot Structure Prepared by Ultrahigh-rate Molecular Beam Epitaxial Growth Technique;IEEE INT SEMICONDUCT;2014
5. Improved temperature characteristics of highly stacked InGaAs/GaAs quantum dot lasers;physica status solidi (c);2013-09-25
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