Watt-level 729-nm Pr3+:YLF laser pumped by an InGaN laser diode

Abstract

A CW laser in a Pr3+:YLF crystal at 729 nm is reported for the first time, to the best of our knowledge. Using an InGaN laser diode providing 24 W at ∼444 nm, a tuning range from 728.75 nm to 729.97 nm is obtained. A laser output power of up to 1.90 W at 729.46 nm is demonstrated. The output power fluctuation is stable within ±2% at 729.46 nm, and the beam quality Mx2 and My2 factors are measured to be 1.46 (x) and 1.40 (y).