Unveiling room temperature upconversion photoluminescence in monolayer WSe2

Abstract

Upconversion photoluminescence (UPL) is a phenomenon describing an anti-Stokes process where the emitted photons have higher energy than the absorbed incident photons. Transition metal dichalcogenides (TMDCs) with strong photon-exciton interactions represent a fascinating platform for studying the anti-Stokes UPL process down to the monolayer thickness limit. Herein, we demonstrate room-temperature UPL emission in monolayer WSe2 with broadband near-infrared excitation. The measured excitation power dependence of UPL intensity at various upconversion energy gains unveils two distinguished upconversion mechanisms, including the one-photon involved multiphonon-assisted UPL process and the two-photon absorption (TPA) induced UPL process. In the phonon-assisted UPL regime, the observed exponential decay of UPL intensity with the increased energy gain is attributed to the decreased phonon population. Furthermore, valley polarization properties of UPL emission with circular polarization excitation is investigated. The demonstrated results will advance future photon upconversion applications based on monolayer TMDCs such as night vision, semiconductor laser cooling, and bioimaging.