InGaAsP-based uni-travelling carrier photodiode structure grown by solid source molecular beam epitaxy
Author:
Publisher
The Optical Society
Subject
Atomic and Molecular Physics, and Optics
Reference28 articles.
1. High-power RF photodiodes and their applications
2. Continuous Wave Terahertz Generation From Ultra-Fast InP-Based Photodiodes
3. InGaAs–InP Photodiodes With High Responsivity and High Saturation Power
4. InP/InGaAs uni-travelling-carrier photodiode with 310 GHz bandwidth
5. Continuous THz-wave generation using antenna-integrated uni-travelling-carrier photodiodes
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1. InP/InGaAs Uni-Traveling-Carrier Photodiode (UTC-PD) With Improved EM Field Response;IEEE Sensors Journal;2022-11-01
2. InP and InGaAs grown on InP substrate by molecular beam epitaxy;MATEC Web of Conferences;2022
3. An Equivalent Circuit Model for Uni-Traveling-Carrier Photodiode;2021 4th International Conference on Electronics and Electrical Engineering Technology;2021-12-03
4. High performance waveguide uni-travelling carrier photodiode grown by solid source molecular beam epitaxy;Optics Express;2019-12-06
5. 60-GHz Transmission Link Using Uni-Traveling Carrier Photodiodes at the Transmitter and the Receiver;Journal of Lightwave Technology;2018-10
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