Spectral response of InGaAs photocathodes with different emission layers-Reference-Cited by-同舟云学术

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Spectral response of InGaAs photocathodes with different emission layers

Published:2016-10-25 Issue:31 Volume:55 Page:8732
ISSN:0003-6935
Container-title:Applied Optics
language:en
Short-container-title:Appl. Opt.

Author:

Yang Mingzhu,Jin Muchun,Chang Benkang

Funder

National Natural Science Foundation of China (NSFC)

Nanjing Institute of Technology (NJIT)

Natural Science Foundation of Shandong Province

Nanjing University of Information Science and Technology (NUIST)

Publisher

The Optical Society

Reference12 articles.

1. LONG‐WAVELENGTH PHOTOEMISSION FROM Ga1 −xInxAs ALLOYS

2. Image intensifier tube (I2) with 1.06-μm InGaAs-photocathode

3. Photoelectron surface escape probability of (Ga,In)As : Cs–O in the 0.9 to [inverted lazy s] 1.6 μm range

4. Photoemissive, Photoconductive, and Optical Absorption Studies of Alkali-Antimony Compounds

5. Relationship of the longer wavelength threshold and the narrower surface band gap: For GaN and GaAlN photocathodes

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1. Theoretical Study on the Photoemission Performance of a Transmission Mode In0.15Ga0.85As Photocathode in the Near-Infrared Region;Molecules;2023-07-07

2. First-principles insights into Cs/NF3 co-activation effects on near-infrared In0.53Ga0.47As (0 0 1) surface;Materials Science in Semiconductor Processing;2022-06

3. InGaAs光电阴极制备工艺中的原位光电子能谱;Acta Optica Sinica;2022

4. Research of relative spectral responsivity calibration of InGaAs photodetector based on supercontinuum light source;Optical Metrology and Inspection for Industrial Applications VII;2020-10-10

5. InP/InGaAs photocathode for hybrid SWIR photodetectors;Journal of Physics: Conference Series;2019-11-01

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