Author:
Smirnov K J,Davydov V V,Batov Y V
Abstract
Abstract
The technology of creation the photocathode with quantum efficiency at the level of 5% based on the InP/InGaAs heterostructures is given. The effect of decreasing the quantum efficiency of the photosensitive structure on radiant sensitivity is considered. Several variants of realization of vacuum photoelectronic device with InP/InGaAs photocathode for special purposes are represented.
Subject
General Physics and Astronomy
Cited by
19 articles.
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