Author:
Zhong Yutong,Ma Hanyuan,Lv Qian,Li Yongzhuo,Feng Jiabin,Li Chen,Xu Jialu,Yu Chenxin,Lv Ruitao,Ning Cun-Zheng
Abstract
We demonstrate an injection-free electroluminescence device fabricated with a CVD-grown monolayer MoSe2/WSe2 lateral heterostructure. The device is based on impact generation of excitons through an alternating voltage as low as ±1 V at room temperature.