Suppressed quantum-confined Stark effect in InGaN-based LEDs with nano-sized patterned sapphire substrates-Reference-Cited by-同舟云学术

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Suppressed quantum-confined Stark effect in InGaN-based LEDs with nano-sized patterned sapphire substrates

Published:2013-11-27 Issue:24 Volume:21 Page:30065
ISSN:1094-4087
Container-title:Optics Express
language:en
Short-container-title:Opt. Express

Author:

Su Vin-Cent,Chen Po-Hsun,Lin Ray-Ming,Lee Ming-Lun,You Yao-Hong,Ho Chung-I,Chen Yi-Chi,Chen Wei-Fan,Kuan Chieh-Hsiung

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Reference31 articles.

1. Photonic crystal efficiency boost

2. The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes

3. Piezoelectric effects on photoluminescence properties in 10-nm-thick InGaN quantum wells

4. Semipolar $({\hbox{20}}\bar{{\hbox{2}}}\bar{{\hbox{1}}})$ InGaN/GaN Light-Emitting Diodes for High-Efficiency Solid-State Lighting

5. Materials and growth issues for high-performance nonpolar and semipolar light-emitting devices

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1. Enhancing the performance of InGaN-based near-infrared light-emitting diodes under a weakly polarized electric field;Applied Optics;2024-07-01

2. Recent Research on Indium-Gallium-Nitride-Based Light-Emitting Diodes: Growth Conditions and External Quantum Efficiency;Crystals;2023-11-23

3. Nanoimprinted patterned sapphire with silica array for efficient InGaN-based green mini-LEDs;Optics Letters;2023-08-08

4. MicroLED/LED electro-optical integration techniques for non-display applications;Applied Physics Reviews;2023-05-01

5. 超构器件的设计、制造与成像应用;Acta Optica Sinica;2023

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