Piezoelectric effects on photoluminescence properties in 10-nm-thick InGaN quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1632539
Reference15 articles.
1. Nitride-based semiconductors for blue and green light-emitting devices
2. Shortest wavelength semiconductor laser diode
3. Optical bandgap energy of wurtzite InN
4. Exciton localization in InGaN quantum well devices
5. Origin of Luminescence from InGaN Diodes
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