Carrier dynamics of InxGa1-xN/GaN multiple quantum wells grown on (−201) β-Ga2O3for bright vertical light emitting diodes
Author:
Publisher
The Optical Society
Subject
Atomic and Molecular Physics, and Optics
Reference36 articles.
1. Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting
2. Enhanced external quantum efficiency in GaN-based vertical-type light-emitting diodes by localized surface plasmons
3. Current crowding in GaN/InGaN light emitting diodes on insulating substrates
4. InGaN blue light-emitting diodes with optimized n-GaN layer
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Review of the Properties of GaN, InN, and Their Alloys Obtained in Cubic Phase on MgO Substrates by Plasma-Enhanced Molecular Beam Epitaxy;Crystals;2024-09-11
2. Study of a GaN/InGaN-based Light Emitting Diode with an Indium Gallium Oxide Current Blocking Layer, Silver Nanoparticles, and a Gallium Oxide Surface Passivation Layer;ECS Journal of Solid State Science and Technology;2023-09-01
3. Three dimensional truncated-hexagonal-pyramid vertical InGaN-based white light emitting diodes based on β-Ga2O3;Optics Letters;2022-06-24
4. Study of a GaN-Based Light-Emitting Diode With a Ga₂O₃ Current Blocking Layer and a Ga₂O₃ Surface Passivation Layer;IEEE Transactions on Electron Devices;2021-08
5. Color‐Tunable 3D InGaN/GaN Multi‐Quantum‐Well Light‐Emitting‐Diode Based on Microfacet Emission and Programmable Driving Power Supply;Advanced Optical Materials;2020-11-09
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3