Carrier dynamics of InxGa1-xN/GaN multiple quantum wells grown on (−201) β-Ga2O3for bright vertical light emitting diodes
Author:
Publisher
The Optical Society
Subject
Atomic and Molecular Physics, and Optics
Reference36 articles.
1. Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting
2. Enhanced external quantum efficiency in GaN-based vertical-type light-emitting diodes by localized surface plasmons
3. Current crowding in GaN/InGaN light emitting diodes on insulating substrates
4. InGaN blue light-emitting diodes with optimized n-GaN layer
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2. Three dimensional truncated-hexagonal-pyramid vertical InGaN-based white light emitting diodes based on β-Ga2O3;Optics Letters;2022-06-24
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4. Color‐Tunable 3D InGaN/GaN Multi‐Quantum‐Well Light‐Emitting‐Diode Based on Microfacet Emission and Programmable Driving Power Supply;Advanced Optical Materials;2020-11-09
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