Super-aligned carbon nanotubes patterned sapphire substrate to improve quantum efficiency of InGaN/GaN light-emitting diodes-Reference-Cited by-同舟云学术

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Super-aligned carbon nanotubes patterned sapphire substrate to improve quantum efficiency of InGaN/GaN light-emitting diodes

Published:2015-07-15 Issue:15 Volume:23 Page:A957
ISSN:1094-4087
Container-title:Optics Express
language:en
Short-container-title:Opt. Express

Author:

Shan Liang,Wei Tongbo,Sun Yuanping,Zhang Yonghui,Zhen Aigong,Xiong Zhuo,Wei Yang,Yuan Guodong,Wang Junxi,Li Jinmin

Funder

National Basic Research Program of China

National High Technology Program of China

National Natural Science Foundation of China (NSFC)

Youth Innovation Promotion Association, Chinese Academy of Sciences

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Reference29 articles.

1. Diffusion and tunneling currents in GaN/InGaN multiple quantum well light-emitting diodes

2. Solid-State Light Sources Getting Smart

3. Defect structure in selectively grown GaN films with low threading dislocation density

4. Enhancement of Flip-Chip Light-Emitting Diodes With Omni-Directional Reflector and Textured Micropillar Arrays

5. Improving light extraction of InGaN-based light emitting diodes with a roughened p-GaN surface using CsCl nano-islands

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2. Thermophysical Characterization of Efficiency Droop in GaN-Based Light-Emitting Diodes;Nanomaterials;2021-05-30

3. Goos–Hänchen shift of a mid-infrared femtosecond filament visualized by the laser coloration method;Laser Physics Letters;2020-12-21

4. Investigation of AlGaN/GaN high electron mobility transistors on Silicon (111) substrates employing multi-stacked strained layer superlattice structures;Superlattices and Microstructures;2020-11

5. Epitaxial growth of deep ultraviolet light emitting diodes with two-step n-AlGaN layer;Thin Solid Films;2020-08

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