Demonstration of GaN-based vertical-cavity surface-emitting lasers with buried tunnel junction contacts
Author:
Funder
Solid State Lighting and Energy Electronics Center, University of California Santa Barbara
Publisher
The Optical Society
Subject
Atomic and Molecular Physics, and Optics
Reference33 articles.
1. Advances and new functions of VCSEL photonics
2. Dynamic characteristics of 410 nm semipolar (202¯1¯) III-nitride laser diodes with a modulation bandwidth of over 5 GHz
3. Gigabit-per-second white light-based visible light communication using near-ultraviolet laser diode and red-, green-, and blue-emitting phosphors
4. A GaN-Based VCSEL with a Convex Structure for Optical Guiding
5. GaN-based vertical-cavity surface-emitting lasers with AlInN/GaN distributed Bragg reflectors
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