Dynamic characteristics of 410 nm semipolar (202¯1¯) III-nitride laser diodes with a modulation bandwidth of over 5 GHz-Reference-Cited by-同舟云学术

Dynamic characteristics of 410 nm semipolar (202¯1¯) III-nitride laser diodes with a modulation bandwidth of over 5 GHz

Published:2016-09-05 Issue:10 Volume:109 Page:101104
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Lee Changmin¹^ORCID,Zhang Chong²,Becerra Daniel L.¹^ORCID,Lee Seunggeun²^ORCID,Forman Charles A.¹,Oh Sang Ho²,Farrell Robert M.¹,Speck James S.¹,Nakamura Shuji¹²,Bowers John E.¹²,DenBaars Steven P.¹²^ORCID

Affiliation:

1. Materials Department, University of California, Santa Barbara, California 93106, USA

2. Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA

Funder

SSLEEC

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4962430

Reference39 articles.

1. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes

2. Nonpolar and Semipolar Group III Nitride-Based Materials

3. Quantum-confined Stark effect on photoluminescence and electroluminescence characteristics of InGaN-based light-emitting diodes

4. Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays

5. Semipolar $({\hbox{20}}\bar{{\hbox{2}}}\bar{{\hbox{1}}})$ InGaN/GaN Light-Emitting Diodes for High-Efficiency Solid-State Lighting

Cited by 33 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Multi-kilometer visible light communication utilizing nonlinearity-adaptive hybrid probabilistic-geometric shaping;Optics Express;2024-08-16

2. 100 Gbps Indoor Access and 4.8 Gbps Outdoor Point-to-Point LiFi Transmission Systems Using Laser-Based Light Sources;Journal of Lightwave Technology;2024-06-15

3. High-speed GaN-based laser diode with modulation bandwidth exceeding 5 GHz for 20 Gbps visible light communication;Photonics Research;2024-05-27

4. Study of equivalent circuit of GaN based laser chip and packaged laser;Scientific Reports;2024-05-18

5. Comparative investigation into key optoelectronic characteristics of semipolar InGaN blue laser diodes: A strategy to mitigate quantum-confine stark effect;Results in Physics;2022-03