Silicon-based asymmetric dimer-resonator grating for narrowband perfect absorption and sensing

Abstract

In this work, a method for designing an ultra-narrowband absorber platform is presented with asymmetric silicon-based dimer-resonators grating. Within the infrared range of 3000 ∼ 4000 nm, two narrowband absorption peaks with absorptivity greater than 99% are produced by the absorber. Moreover, during the optical sensing, such an absorber platform shows high-performance sensitivity factors for the absorption wavelengths at λ1 = 3468 nm (S = 3193 nm/RIU, FOM = 532) and at λ2 = 3562 nm (S = 3120 nm/RIU, FOM = 390). Strong scattering coupling and the magnetic resonances supported in this silicon based grating produce the high absorption. Otherwise, additional methods such as the polarization and incident angles are used to further tune the absorption responses in the intensity and wavelengths, indicating the feasibility for artificial manipulations. The achieved ultra-sharp perfect absorption and the related sensitive response hold the silicon based resonant scheme with wide applications in bio-sensing, spectral filtering and other fields.