Affiliation:
1. Sun Yat-sen University
Abstract
Heterogeneous integration of III–V active devices on lithium niobate-on-insulator (LNOI) photonic circuits enable fully integrated transceivers. Here we present the co-integration of InP-based light-emitting diodes (LEDs) and photodetectors on an LNOI photonics platform. Both devices are realized based on the same III–V epitaxial layers stack adhesively bonded on an LNOI waveguide circuit. The light is evanescently coupled between the LNOI and III–V waveguide via a multiple-section adiabatic taper. The waveguide-coupled LEDs have a 3-dB bandwidth of 40 nm. The photodetector features a responsivity of 0.38 A/W in the 1550-nm wavelength range and a dark current of 9 nA at −0.5 V at room temperature.
Funder
National Key Research and Development Program of China
Local Innovative and Research Teams Project of Guangdong Pearl River Talents Program
Key R&D Program of Guangdong Province
Basic and Applied Basic Research Foundation of Guangdong Province
Fundamental Research Funds for the Central Universities
Subject
Atomic and Molecular Physics, and Optics
Cited by
30 articles.
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