Recent Progresses on Hybrid Lithium Niobate External Cavity Semiconductor Lasers

Author:

Wang Min12ORCID,Fang Zhiwei12,Zhang Haisu12,Lin Jintian34,Zhou Junxia1,Huang Ting15,Zhu Yiran15,Li Chuntao15,Yu Shupeng34,Fu Botao36,Qiao Lingling3,Cheng Ya134578910ORCID

Affiliation:

1. The Extreme Optoelectromechanics Laboratory (XXL), School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China

2. Engineering Research Center for Nanophotonics and Advanced Instrument, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China

3. State Key Laboratory of High Field Laser Physics and CAS Center for Excellence in Ultra-Intense Laser Science, Shanghai Institute of Optics and Fine Mechanics (SIOM), Chinese Academy of Sciences (CAS), Shanghai 201800, China

4. Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

5. State Key Laboratory of Precision Spectroscopy, East China Normal University, Shanghai 200062, China

6. School of Physical Science and Technology, ShanghaiTech University, Shanghai 200031, China

7. Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan 030006, China

8. Collaborative Innovation Center of Light Manipulations and Applications, Shandong Normal University, Jinan 250358, China

9. Shanghai Research Center for Quantum Sciences, Shanghai 201315, China

10. Hefei National Laboratory, Shanghai 230088, China

Abstract

Thin film lithium niobate (TFLN) has become a promising material platform for large scale photonic integrated circuits (PICs). As an indispensable component in PICs, on-chip electrically tunable narrow-linewidth lasers have attracted widespread attention in recent years due to their significant applications in high-speed optical communication, coherent detection, precision metrology, laser cooling, coherent transmission systems, light detection and ranging (LiDAR). However, research on electrically driven, high-power, and narrow-linewidth laser sources on TFLN platforms is still in its infancy. This review summarizes the recent progress on the narrow-linewidth compact laser sources boosted by hybrid TFLN/III-V semiconductor integration techniques, which will offer an alternative solution for on-chip high performance lasers for the future TFLN PIC industry and cutting-edge sciences. The review begins with a brief introduction of the current status of compact external cavity semiconductor lasers (ECSLs) and recently developed TFLN photonics. The following section presents various ECSLs based on TFLN photonic chips with different photonic structures to construct external cavity for on-chip optical feedback. Some conclusions and future perspectives are provided.

Funder

National Key R&D Program of China

Fundamental Research Funds for the Central Universities

National Natural Science Foundation of China

Innovation Program for Quantum Science and Technology

Shanghai Municipal Science and Technology Major Project

Science and Technology Commission of Shanghai Municipality

Engineering Research Center for Nanophotonics & Advanced Instrument, Ministry of Education, East China Normal University

Publisher

MDPI AG

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