Stimulated emission in GaN-based laser diodes far below the threshold region-Reference-Cited by-同舟云学术

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Stimulated emission in GaN-based laser diodes far below the threshold region

Published:2014-01-29 Issue:3 Volume:22 Page:2536
ISSN:1094-4087
Container-title:Optics Express
language:en
Short-container-title:Opt. Express

Author:

Li Ding,Zong Hua,Yang Wei,Feng Liefeng,He Juan,Du Weimin,Wang Cunda,Xie Ya-Hong,Yang Zhijian,Shen Bo,Zhang Guoyi,Hu Xiaodong

Funder

National Natural Science Foundation of China (NSFC)

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Reference30 articles.

1. The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes

2. Improvement of hole injection and electron overflow by a tapered AlGaN electron blocking layer in InGaN-based blue laser diodes

3. Estimation of relative defect densities in InGaN laser diodes by induced absorption of photoexcited carriers

4. Measurement and simulation of filamentation in (Al,In)GaN laser diodes

5. Spectral dynamics of 405 nm (Al,In)GaN laser diodes grown on GaN and SiC substrate

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1. Demonstrating the electron blocking effect of AlGaN/GaN superlattice cladding layers in GaN-based laser diodes;Semiconductor Science and Technology;2023-05-25

2. Analytical models of electron leakage currents in gallium nitride-based laser diodes and light-emitting diodes;Optics Express;2022-01-21

3. Accurate dependences of spontaneous emission factor, lifetime, and photon lifetime on threshold current;Optoelectronics Letters;2020-03

4. III nitride based waveguide parameters optimisation of 1 × 2 optical power divider for telecommunication links.;Third International Seminar on Photonics, Optics, and Its Applications (ISPhOA 2018);2019-04-11

5. The influence of 1/ f noise on the electrical derivative initial peak of high-power semiconductor laser diodes;Pacific Rim Laser Damage 2017: Optical Materials for High-Power Lasers;2017-08-01

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