The influence of 1/ f noise on the electrical derivative initial peak of high-power semiconductor laser diodes-Reference-Cited by-同舟云学术

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The influence of 1/ f noise on the electrical derivative initial peak of high-power semiconductor laser diodes

Published:2017-08-01 Issue: Volume: Page:
ISSN:0277-786X
Container-title:Pacific Rim Laser Damage 2017: Optical Materials for High-Power Lasers
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Author:

Wang Jinyuan¹,Guan Jian¹,Guo Shuxu¹,Xu Meili¹,Gao Fengli¹

Affiliation:

1. Jilin Univ. (China)

Publisher

SPIE

Reference22 articles.

1. High-Power InAlGaAs/GaAs and AlGaAs/GaAs Semiconductor Laser Arrays Emitting at 808 nm

2. Equivalent circuit model of quantum-well lasers

3. Diffusion injected multi-quantum well light-emitting diode structure

4. Thin-film filter, wavelength-locked, multi-laser cavity for dense wavelength beam combining of broad-area laser diode bars

5. Ultralow noise miniature external cavity semiconductor laser

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1. Potassium-doped-C3N4/Cd0.5Zn0.5S photocatalysts toward the enhancement of photocatalytic activity under visible-light;Journal of Alloys and Compounds;2020-03

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