154 μm photoluminescence from Er:O_x centers at extremely low concentration in silicon at 300 K-Reference-Cited by-同舟云学术

154 μm photoluminescence from Er:O_x centers at extremely low concentration in silicon at 300 K

Published:2017-08-18 Issue:17 Volume:42 Page:3311
ISSN:0146-9592
Container-title:Optics Letters
language:en
Short-container-title:Opt. Lett.

Author:

Celebrano Michele,Ghirardini Lavinia,Finazzi Marco,Shimizu Yasuo,Tu Yuan,Inoue Koji,Nagai Yasuyoshi,Shinada Takahiro,Chiba Yuki,Abdelghafar Ayman,Yano Maasa,Tanii Takashi,Prati Enrico

Funder

Ministry of Education, Culture, Sports, Science and Technology (MEXT)

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Reference25 articles.

1. Optical Activation of Er3+Implanted in Silicon by Oxygen Impurities

2. Microstructure of erbium‐implanted Si

3. Incorporation of high concentrations of erbium in crystal silicon

4. Segregation and trapping of erbium during silicon molecular beam epitaxy

5. Doping silicon with erbium by recoil implantation

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