Incorporation of high concentrations of erbium in crystal silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.108894
Reference14 articles.
1. 1.54‐μm luminescence of erbium‐implanted III‐V semiconductors and silicon
2. 1.54‐μm electroluminescence of erbium‐doped silicon grown by molecular beam epitaxy
3. 1.54 μm photoluminescence of erbium-implanted silicon
4. Recrystallization of erbium implantation-induced amorphous silicon on insulator by rapid thermal annealing
5. Rutherford backscattering and secondary ion mass spectrometry studies of erbium implanted silicon
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