Optically pumped GaN vertical cavity surface emitting laser with high index-contrast nanoporous distributed Bragg reflector-Reference-Cited by-同舟云学术

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Optically pumped GaN vertical cavity surface emitting laser with high index-contrast nanoporous distributed Bragg reflector

Published:2015-04-20 Issue:9 Volume:23 Page:11023
ISSN:1094-4087
Container-title:Optics Express
language:en
Short-container-title:Opt. Express

Author:

Lee Seung-Min,Gong Su-Hyun,Kang Jin-Ho,Ebaid Mohamed,Ryu Sang-Wan,Cho Yong-Hoon

Funder

National Research Foundation of Korea

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Reference23 articles.

1. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes

2. InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate

3. Low noisep-π-nGaN ultraviolet photodetectors

4. Room‐temperature cw operation of GaInAsP/InP double‐heterostructure diode lasers emitting at 1.1 μ m

5. 1.3-$\mu$m VCSEL Transmission Performance up to 12.5 Gb/s for Metro Access Networks

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1. Microstructure and reflectance of porous GaN distributed Bragg reflectors on silicon substrates;Journal of Applied Physics;2024-07-22

2. Electrochemical Etching of Nitrogen Ion‐Implanted Gallium Nitride – A Route to 3D Nanoporous Patterning;physica status solidi (b);2024-04-16

3. Sub-surface Imaging of Porous GaN Distributed Bragg Reflectors via Backscattered Electrons;Microscopy and Microanalysis;2024-04

4. Design and simulation of vertical cavity surface emitting laser based on all-inorganic perovskite;Fourteenth International Conference on Information Optics and Photonics (CIOP 2023);2023-11-24

5. The development and applications of nanoporous gallium nitride in optoelectronics: a review;Semiconductor Science and Technology;2023-05-25

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