Hybrid graphene/GaN ultraviolet photo-transistors with high responsivity and speed
Author:
Funder
National Key R and D Program of China
National Natural Science Foundation of China (NSFC)
Publisher
The Optical Society
Subject
Atomic and Molecular Physics, and Optics
Reference28 articles.
1. GaN-based ultraviolet light-emitting diodes with AuCl_3-doped graphene electrodes
2. Direct growth of freestanding GaN on C-face SiC by HVPE
3. Fabrication and characterization of graphene/AlGaN/GaN ultraviolet Schottky photodetector
4. Graphene/GaN diodes for ultraviolet and visible photodetectors
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