Multi-wavelength injection locked semiconductor comb laser

Abstract

Quantum dot lasers on silicon have gained significant interest over the past decade due to their great potential as an on-chip silicon photonic light source. Here, we demonstrate multi-wavelength injection locking of InAs/GaAs quantum dot Fabry–Perot (FP) lasers both on GaAs and silicon substrates by optical self-injection via an external cavity. The number of locked laser modes can be adjusted from a single peak to multiple peaks by tuning wavelength dependent phase and mode spacing of back-injected light through a Lyot filter. The multi-wavelength injection locked laser modes exhibit average optical linewidth of ∼ 20    kHz , which are narrowed by approximately three orders of magnitude from their free-running condition. Furthermore, multi-wavelength self-injection locking via an external cavity exhibits flat-top optical spectral properties with approximately 30 stably locked channels under stable operation over time, where the frequency detuning is less than 700 MHz within 40 min. Particularly, FP lasers by direct epitaxial growth on silicon substrates are self-injection locked as a flat-top comb source with tunable free spectral range from approximately 25 to 700 GHz. The reported results emphasize the great potential of multi-wavelength injection locked lasers as tunable on-chip multi-wavelength light sources.