1550-nm InGaAsP multi-quantum-well structures in InP nano-ridges by selective MOCVD growth on SOI substrates
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OSA
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1. Strain-Compensated InGaAsP Superlattices for Defect Reduction of InP Grown on Exact-Oriented (001) Patterned Si Substrates by Metal Organic Chemical Vapor Deposition;Materials;2018-02-26
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