Author:
Nguyen K. B.,Cardinale G. F.,Tichenor D. A.,Kubiak G. D.,Berger K.,Ray-Chaudhuri A. K.,Perras Y.,Haney S. J.,Nissen R.,Krenz K.,Stulen R. H.,Fujioka H.,Hu C.,Bokor J.,Tennant D. M.,Fetter L. A.
Abstract
This paper reports the first demonstration of MOS device fabrication using extreme ultraviolet lithography. The alignment strategy, mask layout, mask fabrication, and device characteristics will be reported.