Ultrafast properties of femtosecond-laser-ablated GaAs and its application to terahertz optoelectronics-Reference-Cited by-同舟云学术

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Ultrafast properties of femtosecond-laser-ablated GaAs and its application to terahertz optoelectronics

Published:2015-07-13 Issue:14 Volume:40 Page:3388
ISSN:0146-9592
Container-title:Optics Letters
language:en
Short-container-title:Opt. Lett.

Author:

Madéo Julien,Margiolakis Athanasios,Zhao Zhen-Yu,Hale Peter J.,Man Michael K. L.,Zhao Quan-Zhong,Peng Wei,Shi Wang-Zhou,Dani Keshav M.

Funder

Chinese Academy of Sciences (CAS)

National Natural Science Foundation of China (NSFC)

Okinawa Institute of Science and Technology Graduate University (Okinawa Institute of Science and Technology)

Shanghai Municipal Education Commission

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Reference23 articles.

1. Femtosecond, picosecond and nanosecond laser ablation of solids

2. Femtosecond laser micromachining in transparent materials

3. Inducing and probing non-thermal transitions in semiconductors using femtosecond laser pulses

4. Subwavelength ripple formation on the surfaces of compound semiconductors irradiated with femtosecond laser pulses

5. Pulsed-laser hyperdoping and surface texturing for photovoltaics

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