Review of encapsulation materials for AlGaN-based deep-ultraviolet light-emitting diodes
Author:
Publisher
The Optical Society
Subject
Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference39 articles.
1. UV Light-Emitting Diode Fabricated on Hetero-ELO-Grown Al0.22Ga0.78N with Low Dislocation Density
2. AlGaN single-quantum-well light-emitting diodes with emission at 285 nm
3. 324 nm Light Emitting Diodes with Milliwatt Powers
4. Efficient 230–280 nm emission from high-Al-content AlGaN-based multiquantum wells
5. High-Power UV-Light-Emitting Diode on Sapphire
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