Review of encapsulation materials for AlGaN-based deep-ultraviolet light-emitting diodes
Author:
Publisher
The Optical Society
Subject
Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference39 articles.
1. UV Light-Emitting Diode Fabricated on Hetero-ELO-Grown Al0.22Ga0.78N with Low Dislocation Density
2. AlGaN single-quantum-well light-emitting diodes with emission at 285 nm
3. 324 nm Light Emitting Diodes with Milliwatt Powers
4. Efficient 230–280 nm emission from high-Al-content AlGaN-based multiquantum wells
5. High-Power UV-Light-Emitting Diode on Sapphire
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1. Design of high-entropy films as ultra-violet light reflector;Applied Materials Today;2024-02
2. Simultaneously improved hole injection and current uniformity in 293 nm AlGaN-based deep ultraviolet light-emitting diodes;Optical Materials Express;2023-07-27
3. Review—Reliability and Degradation Mechanisms of Deep UV AlGaN LEDs;ECS Journal of Solid State Science and Technology;2023-05-31
4. Current crowding in deep ultraviolet light-emitting diodes with fish-bone shaped p-electrode by microscopic emission investigation;Semiconductor Science and Technology;2023-04-26
5. Lifetime Prediction of Current-and Temperature-Induced Degradation in Silicone-Encapsulated 365 nm High-Power Light-Emitting Diodes;IEEE Access;2023
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