Enhanced performance of InGaN/GaN multiple-quantum-well light-emitting diodes grown on nanoporous GaN layers
Author:
Publisher
The Optical Society
Subject
Atomic and Molecular Physics, and Optics
Reference28 articles.
1. The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes
2. Emission and recombination characteristics ofGa1−xInxN∕GaNquantum well structures with nonradiative recombination suppression by V-shaped pits
3. Enhancement of Light Extraction Through the Wave-Guiding Effect of ZnO Sub-microrods in InGaN Blue Light-Emitting Diodes
4. Enhancing Light Emission of Nanostructured Vertical Light-Emitting Diodes by Minimizing Total Internal Reflection
5. Spontaneous polarization and piezoelectric constants of III-V nitrides
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