GeSn lateral p-i-n photodetector on insulating substrate
Author:
Funder
Ministry of Education - Singapore (MOE)
National University of Singapore (NUS)
Publisher
The Optical Society
Subject
Atomic and Molecular Physics, and Optics
Reference41 articles.
1. Electronic band structure and effective mass parameters of Ge1-xSnx alloys
2. Increased photoluminescence of strain-reduced, high-Sn composition Ge1−xSnx alloys grown by molecular beam epitaxy
3. Germanium–Tin (GeSn) p-Channel MOSFETs Fabricated on (100) and (111) Surface Orientations With Sub-400 $^{\circ}\hbox{C}\ \hbox{Si}_{2}\hbox{H}_{6}$ Passivation
4. Solid Solubilities and Electrical Properties of Tin in Germanium Single Crystals
5. Single‐crystal Sn/Ge superlattices on Ge substrates: Growth and structural properties
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