Influences of Si-doped graded short-period superlattice on green InGaN/GaN light-emitting diodes-Reference-Cited by-同舟云学术

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Influences of Si-doped graded short-period superlattice on green InGaN/GaN light-emitting diodes

Published:2016-04-01 Issue:7 Volume:24 Page:7743
ISSN:1094-4087
Container-title:Optics Express
language:en
Short-container-title:Opt. Express

Author:

Lee Kwanjae,Lee Cheul-Ro,Lee Jin Hong,Chung Tae-Hoon,Ryu Mee-Yi,Jeong Kwang-Un,Leem Jae-Young,Kim Jin Soo

Funder

Business for Cooperative R&D between Industry, Academy, and Research Institute funded Korea Small and Medium Business Administration

Ministry of Education, Korea

Ministry of Science, ICT and Future Planning (MSIP)

Publisher

The Optical Society

Subject

Atomic and Molecular Physics, and Optics

Reference31 articles.

1. Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting

2. Origin of the “green gap”: Increasing nonradiative recombination in indium-rich GaInN/GaN quantum well structures

3. LEDs for Solid-State Lighting: Performance Challenges and Recent Advances

4. InGaN Light-Emitting Diodes onc-Face Sapphire Substrates in Green Gap Spectral Range

5. In-rich InGaN thin films: Progress on growth, compositional uniformity, and doping for device applications

Cited by 23 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Recent Progress in Long‐Wavelength InGaN Light‐Emitting Diodes from the Perspective of Epitaxial Structure;Advanced Photonics Research;2023-05-26

2. Freestanding Membranes for Unique Functionality in Electronics;ACS Applied Electronic Materials;2023-01-20

3. Radiative emission mechanism analysis of green InGaN/GaN light-emitting diodes with the Si-doped graded short-period superlattice;Journal of Luminescence;2023-01

4. Enhancement in Structural and Electroluminescence Properties of Green Light Emission for Semipolar (11–22) InGaN/GaN Based Grown on m-Plane Sapphire via Low Temperature Ammonia Treatment (LTAT);Photonics;2022-09-08

5. Analysis of size dependence and the behavior under ultrahigh current density injection condition of GaN-based Micro-LEDs with pixel size down to 3 μm;Journal of Physics D: Applied Physics;2022-05-24

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